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From Memory Traces to Surface Chemistry: Decoding REDOX Reactions

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Author(s):
Silva, Ana Luiza Costa ; Silva, Rafael Schio Wengenroth ; Moises, Lucas Augusto ; Chiquito, Adenilson Jose ; de Godoy, Marcio Peron Franco ; Hartmann, Fabian ; Lopez-Richard, Victor
Total Authors: 7
Document type: Journal article
Source: ACS APPLIED ELECTRONIC MATERIALS; v. 7, n. 4, p. 9-pg., 2025-02-17.
Abstract

Gas and moisture sensing devices leveraging the resistive switching effect in transition metal oxide memristors promise to revolutionize next-generation, nanoscaled, cost-effective, and environmentally sustainable sensor solutions. These sensors encode readouts in resistance state changes based on gas concentration, yet their nonlinear current-voltage characteristics offer richer dynamics, capturing detailed information about REDOX reactions and surface kinetics. Traditional vertical devices fail to fully exploit this complexity. This study demonstrates planar resistive switching devices, moving beyond the Butler-Volmer model. A systematic investigation of the electrochemical processes in Na-doped ZnO with lateral planar contacts reveals intricate patterns resulting from REDOX reactions on the device surface. When combined with advanced algorithms for pattern recognition, these allow the analysis of complex switching patterns, including crossings, loop directions, and resistance values, providing unprecedented insights for next-generation complex sensors. (AU)

FAPESP's process: 23/17490-2 - Influence of external effects on the properties of resistive memory of metal oxide semiconductor films
Grantee:Ana Luiza Costa Silva
Support Opportunities: Scholarships in Brazil - Post-Doctoral
FAPESP's process: 23/05436-3 - Memory emergence in nonlinear systems and nanodevices
Grantee:Rafael Schio Wengenroth Silva
Support Opportunities: Scholarships in Brazil - Doctorate