Advanced search
Start date
Betweenand
Related content
(Reference retrieved automatically from SciELO through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Al-doped ZnO Thin Films via Sputtering: Influence of Structural Defects on Ozone Gas Sensitivity

Full text
Author(s):
Douglas Henrique Sales [1] ; Ramon Resende Leite [2] ; Julio Cesar Camilo Albornoz Diaz [3] ; Amanda Akemy Komorizono [4] ; Maria Ines Basso Bernardi [5] ; Valmor Roberto Mastelaro [6] ; Elson Longo [7] ; Silvio Rainho Teixeira [8] ; Agda Eunice de Souza [9]
Total Authors: 9
Affiliation:
[1] Universidade Estadual Paulista (UNESP). Faculdade de Ciências e Tecnologia - Brasil
[2] Universidade de São Paulo. Instituto de Física de São Carlos - Brasil
[3] Universidade de São Paulo. Instituto de Física de São Carlos - Brasil
[4] Universidade de São Paulo. Instituto de Física de São Carlos - Brasil
[5] Universidade de São Paulo. Instituto de Física de São Carlos - Brasil
[6] Universidade de São Paulo. Instituto de Física de São Carlos - Brasil
[7] Universidade Federal de São Carlos. Laboratório Interdisciplinar de Eletroquímica e Cerâmica - Brasil
[8] Universidade Estadual Paulista (UNESP). Faculdade de Ciências e Tecnologia - Brasil
[9] Universidade Estadual Paulista (UNESP). Faculdade de Ciências e Tecnologia - Brasil
Total Affiliations: 9
Document type: Journal article
Source: MATERIALS RESEARCH-IBERO-AMERICAN JOURNAL OF MATERIALS; v. 27, 2024-10-21.
Abstract

Nowadays, few studies have reported on the sensitivity of thin films of Al-doped ZnO to ozone. This gas can become harmful to health depending on its environmental concentration. This work presents the sensor response to ozone gas of pure ZnO and Al-doped thin films, prepared by sputtering with varying deposition times. Ceramic targets prepared by SSR, compacted at 65MPa, sintered at 950°C, with densities ranging from 74-97% of the theoretical density, depending on the dopant content were used. The films showed an increase in thickness with deposition time and a preferential growth in the (002) plane of the ZnO structure. Slight changes in the band gap value occurred with increasing Al, whose presence in the ZnO lattice was confirmed by XPS. The sensitivity results to ozone showed that the performance of the films decreased with the Al-doping, which could be attributed to the defects formation related to oxygen in the lattice during Zn-Al substitution or to the greater densification of the films. Although the results showed a decrease in the sensor properties, all films are sensitive to ozone, including the low concentrations of 50 ppb, a limit considered for a maximum daily average for human exposure, established by the WHO. (AU)

FAPESP's process: 13/07296-2 - CDMF - Center for the Development of Functional Materials
Grantee:Elson Longo da Silva
Support Opportunities: Research Grants - Research, Innovation and Dissemination Centers - RIDC