| Full text | |
| Author(s): |
Volpato, Maria Carolina
;
Rosa, Henrique G.
;
de Assis, Pierre-Louis
;
Frateschi, Newton Cesario
Total Authors: 4
|
| Document type: | Journal article |
| Source: | 2024 SBFOTON INTERNATIONAL OPTICS AND PHOTONICS CONFERENCE, SBFOTON IOPC 2024; v. N/A, p. 3-pg., 2024-01-01. |
| Abstract | |
In this work, we investigate the saturable absorption behavior of a 1T'-MoTe2 monolayer placed on top of a silicon nitride waveguide. Saturable absorption is modeled by calculating the quasi-Fermi level separation upon light absorption and carrier generation. After simulating the coupling between the monolayer and a silicon nitride waveguide, we propose an integrated saturable absorber with 20% coupling efficiency and about 2 mu W of saturation intensity, for a typical monolayer of 50 mu m. Our results demonstrate significant potential for 1T'-MoTe2 in on-chip photonic devices, offering a compact and efficient alternative to conventional absorbers. (AU) | |
| FAPESP's process: | 18/25339-4 - Integrated photonics devices |
| Grantee: | Newton Cesario Frateschi |
| Support Opportunities: | Research Projects - Thematic Grants |