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Interacting virtual topological phases in defect-rich two-dimensional materials

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Author(s):
Lima, F. Crasto de ; Miwa, Roberto H. ; Lewenkopf, Caio ; Fazzio, Adalberto
Total Authors: 4
Document type: Journal article
Source: PHYSICAL REVIEW B; v. 111, n. 19, p. 7-pg., 2025-05-19.
Abstract

We investigate the robustness of virtual topological states-topological phases away from the Fermi energy- against the electron-electron interaction and band filling. As a case study, we employ a realistic model to investigate the properties of vacancy-driven topological phases in transition metal dichalcogenides (TMDs) and establish a connection between the degree of localization of topological wave functions, the vacancy density, and the electron-electron interaction strength with the topological phase robustness. We demonstrate that electron-electron interactions play a crucial role in degrading topological phases thereby determining the validity of single-particle approximations for topological insulator phases. Our findings can be naturally extended to virtual topological phases of a wide range of materials. (AU)

FAPESP's process: 23/09820-2 - Materials by design: from quantum materials to energy applications
Grantee:Gustavo Martini Dalpian
Support Opportunities: Research Projects - Thematic Grants