Luminescence from miniband states in heavily doped... - BV FAPESP
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(Reference retrieved automatically from SciELO through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Luminescence from miniband states in heavily doped superlattices

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Author(s):
Oliveira, Ricardo Faveron [1] ; Henriques, A. B. ; Lamas, Tomas Erikson [3] ; Quivy, A. A. ; Pires, M. P. ; Souza, P. L. ; Yavich, B. ; Abramof, E.
Total Authors: 8
Affiliation:
[1] Universidade de São Paulo (USP). Instituto de Física. Departamento de Física de Materiais e Mecânica - Brasil
[3] Universidade de São Paulo (USP). Instituto de Física. Departamento de Física de Materiais e Mecânica - Brasil
Total Affiliations: 8
Document type: Journal article
Source: Brazilian Journal of Physics; v. 34, n. 2B, p. 650-652, June 2004.
Field of knowledge: Physical Sciences and Mathematics - Physics
Abstract

We have studied doped superlattices of GaAs/AlGaAs composition. When the doping atoms are introduced into the barriers surrounding the superlattice, as well as to the inner ones, but with half of the concentration, the photoluminescence due to interband transitions from extended superlattice states is detected. This is demonstrated by a study of the sample´s photoluminescence in a magnetic field, whose intensity oscillates in concomitance with the SdH spectrum of electrons confined in the miniband. (AU)

FAPESP's process: 99/10359-7 - Research on semiconductors involving low temperatures and high magnetic fields
Grantee:Nei Fernandes de Oliveira Junior
Support Opportunities: Research Projects - Thematic Grants