Low growth rate InAs/GaAs quantum dots for room-temperature luminescence over 1.3 µm

Da Silva‚ MJ; Martini‚ S.; Lamas‚ TE; Quivy‚ AA; Da Silva‚ ECF; Leite‚ JR

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(Reference retrieved automatically from Google Scholar through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Low growth rate InAs/GaAs quantum dots for room-temperature luminescence over 1.3 µm

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Author(s):	Da Silva‚ MJ ; Martini‚ S. ; Lamas‚ TE ; Quivy‚ AA ; Da Silva‚ ECF ; Leite‚ JR Total Authors: 6
Document type:	Journal article
Source:	Microelectronics Journal; v. 34, n. 5, p. 631-633, 2003.

FAPESP's process:	98/12779-0 - Experimental and theoretical study of the epitaxial semiconductor nanostructures derived from III-V compounds
Grantee:	Gennady Gusev
Support Opportunities:	Research Projects - Thematic Grants

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