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(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Generation and control of spin-polarized photocurrents in GaMnAs heterostructures

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Bezerra, Anibal T. [1, 2] ; Castelano, Leonardo K. [1] ; Degani, Marcos H. [3, 2] ; Maialle, Marcelo Z. [3, 2] ; Farinas, Paulo F. [1, 2] ; Studart, Nelson [1, 2]
Total Authors: 6
[1] Univ Fed Sao Carlos, Dept Fis, BR-13565905 Sao Carlos, SP - Brazil
[2] CNPq MCT, DISSE Inst Nacl Ciencia & Tecnol Nanodisposit Sem, Rio De Janeiro, RJ - Brazil
[3] Univ Estadual Campinas, Fac Ciencias Aplicadas, BR-13484350 Limeira, SP - Brazil
Total Affiliations: 3
Document type: Journal article
Source: Applied Physics Letters; v. 104, n. 2 JAN 13 2014.
Web of Science Citations: 2

Photocurrents are calculated for a specially designed GaMnAs semiconductor heterostructure. The results reveal regions in the infrared range of the energy spectrum, in which the proposed structure is remarkably spin-selective. For such photon energies, the generated photocurrents are strongly spin-polarized. Application of a relatively small static bias in the growth direction of the structure is predicted to efficiently reverse the spin-polarization for some photon energies. This behavior suggests the possibility of conveniently simple switching mechanisms. The physics underlying the results is studied and understood in terms of the spin-dependent properties emerging from the particular potential profile of the structure. (C) 2014 AIP Publishing LLC. (AU)

FAPESP's process: 12/13052-6 - Transport properties and quantum computation in nanostructures
Grantee:Leonardo Kleber Castelano
Support type: Regular Research Grants