Amorphous semiconductor materials

• Grant number: 91/03635-6
• Support Opportunities: Research Projects - Thematic Grants
• Start date: November 01, 1992
• End date: March 31, 1997
• Field of knowledge: Physical Sciences and Mathematics - Physics
• Principal Investigator: Fernando Alvarez
• Grantee: Fernando Alvarez
• Host Institution: Instituto de Física Gleb Wataghin (IFGW). Universidade Estadual de Campinas (UNICAMP). Campinas , SP, Brazil

Abstract

This project refers to the science and technology of amorphous semiconductors. These materials today constitute one of the frontiers of solid state physics and electronic technology. It is proposed to research the basic properties of amorphous hydrogenated alloys of tetrahedral coordination, that is to say, those that involve the lightest elements of column IV of the periodic table of chemical elements (C, Si and Ge). The specific materials to be researched are: a-Si:H, a-Si:C:H, a-Ge:H, a-Ge:Si:H. To these elementary semiconductors or to their alloys will be added dopant impurities (B, P, AL, Sb, In, Ga, N, etc.) in order to manufacture some electronic devices such as, for example: solar cells, electroluminescent devices, quantum wells and supernetworks, surface barrier devices, etc. (AU)