Complex defects in semiconductors: applications to spintronics and wide band gap materials

• Grant number: 05/00668-5
• Support Opportunities: Research Grants - Young Investigators Grants
• Start date: June 01, 2006
• End date: May 31, 2008
• Field of knowledge: Physical Sciences and Mathematics - Physics - Condensed Matter Physics
• Principal Investigator: Gustavo Martini Dalpian
• Grantee: Gustavo Martini Dalpian
• Host Institution: Centro de Ciências Naturais e Humanas (CCNH). Universidade Federal do ABC (UFABC). Ministério da Educação (Brasil). Santo André , SP, Brazil

Abstract

The objective of this project is to study complex defects in diluted magnetic semiconductors (DMS) and wide band gap semiconductors using first principles methods based in density functional theory. DMSs are important materials to the development of devices using spintronics principles. Its possible applications are future devices based on spin currents and the quantum computer. The wide band gap materials to be studied are ZnO and GaN. GaN has several applications for optical devices, such as blue LEDs; ZnO is a new material, with potential applications similar to GaN. Some of the defects to be studied are: transition metal atoms with donors or acceptors in GaAs, GaN, and ZnO; intrinsic defects in GaN and ZnO under pressure; growth properties of transition metals in GaAs (100) and GaN (100); defects in the interface of GaAs/MnAs. (AU)