| Grant number: | 12/03383-5 |
| Support Opportunities: | Regular Research Grants |
| Start date: | May 01, 2012 |
| End date: | April 30, 2015 |
| Field of knowledge: | Physical Sciences and Mathematics - Physics - Nuclear Physics |
| Principal Investigator: | Nilberto Heder Medina |
| Grantee: | Nilberto Heder Medina |
| Host Institution: | Instituto de Física (IF). Universidade de São Paulo (USP). São Paulo , SP, Brazil |
| Associated researchers: | Djones Vinicius Lettnin ; Eduardo Augusto Bezerra ; Fabian Luis Vargas ; Jader Alves de Lima Filho ; Manfredo Harri Tabacniks ; Marcilei Aparecida Guazzelli ; Nemitala Added ; Roberto Baginski Batista Santos |
Abstract
Ionizing radiation that focuses on semiconductor devices can change its properties by changing the electrical parameters that characterize them, and if memory or processors, you can modify the information contained in these devices. The development of methodology for investigating these effects and the installation of a dedicated experimental setup is fundamental step for understanding these processes, contributed significantly to the development of national aerospace technology. Through this research project will develop a methodology for testing, characterization and qualification of electronic devices and components when subjected to radiation induced by heavy ion beams.The tests will be conducted in IFUSP radiation (heavy ions and protons) and the University Center of FEI (X-rays) using electronic devices resistant to radiation and some commercial developed both at the Federal University of Santa Catarina and the Pontifical Catholic University of Rio Grande do Sul (PUC-RS), which will also collaborate to develop and provide platforms for testing of the experimental arrangement IFUSP. (AU)
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