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Topological insulator in HgTe quantum wells: directed to new spintronic devices

Grant number: 10/10097-3
Support type:Research Grants - Visiting Researcher Grant - International
Duration: October 29, 2010 - December 28, 2010
Field of knowledge:Physical Sciences and Mathematics - Physics
Principal Investigator:Gennady Gusev
Grantee:Gennady Gusev
Visiting researcher: Oleg Aleksandrovich Shegai
Visiting researcher institution: Siberian Branch of the Russian Academy of Sciences (SB RAS), Russia
Home Institution: Instituto de Física (IF). Universidade de São Paulo (USP). São Paulo , SP, Brazil

Abstract

The visit of Dr. O.A. Shegai be helpful to keep a long-term collaboration between Novosibirsk and the various groups dedicated to the study of systems nanostructured in Brazil. Among these groups are the New Semiconductor Materials Laboratory of the Institute of Physics, University of São Paulo (LNMS-IFUSP), also theoretical and experimental groups at the Federal University of São Carlos, Institute of Physics of São Carlos-USP and others. As leader of the LNMS IFUSP, I have developed several important projects, including the international-COFECUB USP, FAPESP and CNPq-CNRS-CIAM. The project's overall objective is to study nanostructures for applications in semiconductor spintronics. We are proposing research these effects in HgTe quantum wells grown at the Institute of Semiconductor Physics, Novosibirsk. Our research points toward a new generation of electronic devices based on spin. For both groups in Brazil and Russia, some of the benefits of this project are: changes in knowledge of fundamental physics related to the development of growth techniques needed to produce new structures such as topological insulators and the possible application of this knowledge and its consequences future devices. As a complement, the continuity of cooperation between the two institutions should allow future projects together and exchange of knowledge and culture. (AU)

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