| Grant number: | 13/12993-4 |
| Support Opportunities: | Regular Research Grants |
| Start date: | September 01, 2013 |
| End date: | August 31, 2015 |
| Field of knowledge: | Engineering - Materials and Metallurgical Engineering - Nonmetallic Materials |
| Principal Investigator: | Alexandre Mesquita |
| Grantee: | Alexandre Mesquita |
| Host Institution: | Instituto de Geociências e Ciências Exatas (IGCE). Universidade Estadual Paulista (UNESP). Campus de Rio Claro. Rio Claro , SP, Brazil |
| City of the host institution: | Rio Claro |
| Associated researchers: | Fábio Simões de Vicente ; Maria Inês Basso Bernardi |
Abstract
The nanostructured materials have been extensively studied, not only because of the new properties and their possible technological applications, but also by the search for a better understanding of the physical and chemical processes that cause these changes. Compared to semiconductor materials, studies of the structure at the nanometer scale has received considerable interest due to the quantum size effect that these materials present. Nanocrystalline semiconductors have intermediate electronic properties between those of molecular structure and macrocrystalline solid, presenting a wide range of applications. However, there is no consensus in the literature about the nature of the photoluminescence emission in various nanocrystalline semiconductor materials. In this context, this project aims to perform the synthesis and characterization of nanostructured semiconductor materials and to correlate with photoluminescent properties. Chemical methods of preparation will be used in this project, such as hydrothermal method assisted by microwave and the polymeric precursor method. Morphological characterization will be performed through advanced techniques such as scanning electron microscopy, high-resolution (FEG-SEM) and BET to determine the surface area, particle size and curves of adsorption/desorption, pore size and distribution. Structural properties of nanoparticles, as well as their chemical and physical properties will be determined by conventional techniques such as X-ray diffraction, Raman spectroscopy and photoluminescence. The local structure of semiconductor materials will be evaluated by X-ray absorption techniques (XANES and EXAFS) to be held on Sincrotros Light National Laboratory (LNLS) facility. (AU)
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