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Grain boundary in electro-ceramic materials: understanding nature and its function in the hematite (Fe2O3)


Hematite (Fe2O3) is an important n-type semiconductor, with great potential as a photoanode to generate hydrogen from the water splitting and sunlight. The efficiency of this semiconductor depends greatly on its electronic conductivity and the presence of grain boundary can be a serious obstacle. In this proposal, we intend to identify the types of grain boundaries present in micro and nanostructured polycrystalline ceramics of pure Fe2O3 and doped with Sn4+. In addition, we intend to obtain nanostructured polycrystalline ceramics of Fe2O3 doped with Sn4+ with higher electronic conductivity than a doped material with the same level and type of impurity, but with micrometric grain. In fact, in an innovative way we will show that the grain boundary segregation can generate more conductive materials and we will explore this phenomenon to obtain semiconductor oxides with high electronic conductivity (AU)

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Scientific publications
(References retrieved automatically from Web of Science and SciELO through information on FAPESP grants and their corresponding numbers as mentioned in the publications by the authors)
DESTRO, FABRICIO B.; SCZANCOSKI, JULIO C.; SOARES, MARIO R. S.; LEITE, EDSON R.. Influence of SnO2 concentration on electrical response of alpha-Fe2O3 sintered with different thermal history conditions. CERAMICS INTERNATIONAL, v. 46, n. 17, p. 7-pg., . (17/03135-5, 13/07296-2, 12/14004-5)
SOARES, MARIO R. S.; COSTA, CARLOS A. R.; LANZONI, EVANDRO M.; BETTINI, JEFFERSON; RAMIREZ, CARLOS A. O.; SOUZA, FLAVIO L.; LONGO, ELSON; LEITE, EDSON R.. Unraveling the Role of Sn Segregation in the Electronic Transport of Polycrystalline Hematite: Raising the Electronic Conductivity by Lowering the Grain-Boundary Blocking Effect. ADVANCED ELECTRONIC MATERIALS, v. 5, n. 6, . (17/03135-5, 17/02317-2, 13/07296-2)

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