Simulation of quantum devices based on spin

• Grant number: 08/11423-1
• Support Opportunities: Scholarships in Brazil - Doctorate (Direct)
• Start date: May 01, 2009
• End date: September 30, 2009
• Field of knowledge: Engineering - Electrical Engineering - Electrical, Magnetic and Electronic Circuits
• Principal Investigator: Lara Kühl Teles
• Grantee: Ronaldo Rodrigues Pelá
• Host Institution: Instituto Tecnológico de Aeronáutica (ITA). Ministério da Defesa (Brasil). São José dos Campos , SP, Brazil
• Associated research grant: 06/05858-0 - Theoretical study of semiconductor alloys for applications in spintronics and optoelectronics, AP.JP

Scientific publications

(4)

(References retrieved automatically from Web of Science and SciELO through information on FAPESP grants and their corresponding numbers as mentioned in the publications by the authors)

PELA, R. R.; CAETANO, C.; MARQUES, M.; FERREIRA, L. G.; FURTHMUELLER, J.; TELES, L. K.. Accurate band gaps of AlGaN, InGaN, and AlInN alloys calculations based on LDA-1/2 approach. Applied Physics Letters, v. 98, n. 15, APR 11 2011. (08/11423-1, 06/05858-0)

PELA, R. R.; TELES, L. K.; MARQUES, M.; MARTINI, S.. Theoretical study of the indium incorporation into III-V compounds revisited: The role of indium segregation and desorption. Journal of Applied Physics, v. 113, n. 3, JAN 21 2013. (08/11423-1, 07/06117-6, 06/05858-0)

PELÁ‚ RR; CAETANO‚ C.; MARQUES‚ M.; FERREIRA‚ LG; FURTHMULLER‚ J.; TELES‚ LK. Accurate band gaps of AlGaN‚ InGaN‚ and AlInN alloys calculations based on LDA-1/2 approach. Applied Physics Letters, v. 98, n. 15, p. 151907-151907, 2011. (08/11423-1, 06/05858-0)

PELA, R. R.; MARQUES, M.; FERREIRA, L. G.; FURTHMUELLER, J.; TELES, L. K.. GaMnAs: Position of Mn-d levels and majority spin band gap predicted from GGA-1/2 calculations. Applied Physics Letters, v. 100, n. 20, p. 202408-202408, 2012. (08/11423-1, 06/05858-0)