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Ab initio simulations of memristive systems: from the raw material to the device

Grant number: 11/21719-8
Support Opportunities:Scholarships in Brazil - Doctorate
Start date: March 01, 2012
End date: December 31, 2015
Field of knowledge:Physical Sciences and Mathematics - Physics - Condensed Matter Physics
Principal Investigator:Gustavo Martini Dalpian
Grantee:Antonio Cláudio Michejevs Padilha
Host Institution: Centro de Ciências Naturais e Humanas (CCNH). Universidade Federal do ABC (UFABC). Ministério da Educação (Brasil). Santo André , SP, Brazil
Associated research grant:10/16202-3 - Electronic, magnetic and transport properties of nanostructures, AP.TEM
Associated scholarship(s):15/05830-7 - Ab initio simulations of memristive systems: from the raw material to the device, BE.EP.DR

Abstract

Memristors and Memristive Devices were idealized nearly 40 years ago, but were properly characterized in an experiment only in 2008. Those devices are attractive candidates to provide a paradigm change in volatile and non-volatile memory devices fabrication. These memory devices would be faster, denser and more enduring than the devices available today, but their immediate fabrication is not yet possible, due to the lack of understanding about their operation at the atomic level. In this project we aim to study the raw materials both separately and together using ab initio state-of-the-art techniques as DFT and Green function out-of-equilibrium formalism transport in order to contribute to the understanding of the electronic structure, configuration of atoms and electronic transport of these systems at a fundamental level. (AU)

News published in Agência FAPESP Newsletter about the scholarship:
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Scientific publications
(References retrieved automatically from Web of Science and SciELO through information on FAPESP grants and their corresponding numbers as mentioned in the publications by the authors)
RAEBIGER, HANNES; PADILHA, ANTONIO CLAUDIO M.; ROCHA, ALEXANDRE REILY; DALPIAN, GUSTAVO M.. Electronic mechanism for resistive switching in metal/insulator/metal nanodevices. JOURNAL OF PHYSICS D-APPLIED PHYSICS, v. 53, n. 29, . (11/21719-8, 13/22577-8, 15/05830-7)
PADILHA, A. C. M.; RAEBIGER, H.; ROCHA, A. R.; DALPIAN, G. M.. Charge storage in oxygen deficient phases of TiO2: defect Physics without defects. SCIENTIFIC REPORTS, v. 6, . (10/16202-3, 15/05830-7, 11/19924-2, 11/21719-8, 13/22577-8)