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Ab initio simulations of memristive systems: from the raw material to the device

Grant number: 15/05830-7
Support type:Scholarships abroad - Research Internship - Doctorate
Effective date (Start): May 28, 2015
Effective date (End): September 07, 2015
Field of knowledge:Physical Sciences and Mathematics - Physics - Condensed Matter Physics
Principal researcher:Gustavo Martini Dalpian
Grantee:Antonio Cláudio Michejevs Padilha
Supervisor abroad: Hannes Harald Raebiger
Home Institution: Centro de Ciências Naturais e Humanas (CCNH). Universidade Federal do ABC (UFABC). Ministério da Educação (Brasil). Santo André , SP, Brazil
Research place: Yokohama National University, Japan  
Associated to the scholarship:11/21719-8 - Ab initio simulations of memristive systems: from the raw material to the device, BP.DR


Memristors and Memristive Devices have been predicted nearly 40 years ago, but it was only in 2008 that such devices were characterized in laboratory. These devices are strong candidates to change the paradigm of memory devices, either volatile and non-volatile storage systems. This would be achieved by the possibility of manufacturing denser, faster and better-enduring devices than those available today. Its immediate application is, however, hindered by the lack of understanding about its working principle, specially at atomic level. In this project we have a clear objective: using state-of-the-art ab initio techniques such as Density Functional Theory and electronic transport codes based on non-equilibrium Green's functions, we seek to study the raw materialsused to build these devices either separately and together as close as possible to the actual device, and in this way contribute to the understanding of the electronic structure, atomic arrangement and electronic transport mechanisms of memristors at its basic level. (AU)

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Scientific publications
(References retrieved automatically from Web of Science and SciELO through information on FAPESP grants and their corresponding numbers as mentioned in the publications by the authors)
RAEBIGER, HANNES; PADILHA, ANTONIO CLAUDIO M.; ROCHA, ALEXANDRE REILY; DALPIAN, GUSTAVO M.. Electronic mechanism for resistive switching in metal/insulator/metal nanodevices. JOURNAL OF PHYSICS D-APPLIED PHYSICS, v. 53, n. 29, . (11/21719-8, 13/22577-8, 15/05830-7)
PADILHA, A. C. M.; RAEBIGER, H.; ROCHA, A. R.; DALPIAN, G. M.. Charge storage in oxygen deficient phases of TiO2: defect Physics without defects. SCIENTIFIC REPORTS, v. 6, . (10/16202-3, 13/22577-8, 15/05830-7, 11/19924-2, 11/21719-8)

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