Physical characterization of thin films of ZnSe and ZnTe prepared by electrodeposition

• Grant number: 12/13678-2
• Support Opportunities: Scholarships abroad - Research Internship - Doctorate (Direct)
• Start date: November 01, 2012
• End date: October 31, 2013
• Field of knowledge: Physical Sciences and Mathematics - Chemistry - Physical-Chemistry
• Principal Investigator: Lucia Helena Mascaro Sales
• Grantee: Murilo Fernando Gromboni
• Supervisor: Alejandro Pérez-Rodríguez
• Host Institution: Centro de Ciências Exatas e de Tecnologia (CCET). Universidade Federal de São Carlos (UFSCAR). São Carlos , SP, Brazil
• Institution abroad: Institut de Recerca en Energia de Catalunya, Barcelona (IREC), Spain
• Associated to the scholarship: 09/00788-1 - Preparation and characterization of ZnTe and ZnSe thin films for the ECALE technique, BP.DD

Abstract

During the PhD project we studied the conditions for obtaining a thin film of ZnSe and ZnTe electrodeposited multilayer and codeposition. These films showed characteristics quite different in terms of their morphology and photocurrent, however, very little variation in band gap. An interesting result was observed in multilayer films obtained, where the photocurrent and morphology had a highly significant variation in the film was started by deposition of Se and Zn, which was maintained at the same charge deposition and number of layers. Another aspect of these deposits is that in the EDS is not detected Zn in the film, even with the morphology characteristic of this material, and therefore, there was no variation in the composition of the film. These results show that would be important to relate the properties presented by these films in their microstructure and thickness. Another important characteristic to evaluate in this case is the composition profile of the films according to the number and order of layers of Zn and Se and Te, and Zn. Nor can one fail to mention after knowing the physical properties of these films and optoelectronic semiconductors ZnTe and ZnSe we need to evaluate whether these materials would have a good performance in photovoltaic devices. Thus, this project intends to from physical techniques such as scanning electron microscopy with energy dispersive spectroscopy X-ray, X-ray diffraction spectroscopy, electrochemical impedance spectroscopy and especially by micro-Raman spectroscopy perform physical characterization of thin films of ZnSe and ZnTe and obtain structural and compositional parameters of the films in order to correlate the nanostructures formed in the deposition process and the optoelectronic properties of semiconductor films. (AU)