Study of IGBT power transistors

• Grant number: 13/18133-7
• Support Opportunities: Scholarships in Brazil - Scientific Initiation
• Start date: October 01, 2013
• End date: September 30, 2014
• Field of knowledge: Engineering - Electrical Engineering - Power Systems
• Principal Investigator: Michele Rodrigues
• Grantee: Jefferson Willians Moreira Santiago
• Host Institution: Centro Universitário FEI (UNIFEI). Campus de São Bernardo do Campo. São Bernardo do Campo , SP, Brazil

Abstract

This work of undergraduate research aims to study power transistors especially IGBT. Will study their main static and dynamic characteristics through numerical simulations and experimental measurements. The physical structure of these transistors will also be analyzed in order to analyze the impact that variations in structure can have on their functioning as a key.