Electrical characterization of MISHEMT for high frequency analog blocks applications

• Grant number: 23/14492-4
• Support Opportunities: Scholarships in Brazil - Doctorate
• Start date: March 01, 2024
• End date: July 31, 2026
• Field of knowledge: Engineering - Electrical Engineering
• Principal Investigator: Paula Ghedini Der Agopian
• Grantee: Bruno Godoy Canales
• Host Institution: Escola Politécnica (EP). Universidade de São Paulo (USP). São Paulo , SP, Brazil

Abstract

The constant evolution of technology depends, to a large extent, on the continuous development of semiconductor devices. These electronic components are essential for the operation of a wide range of devices, from smartphones and computers to communication systems and industrial applications. One of the recent and promising advances in this field is the MISHEMT (Metal-Insulator-Semiconductor High Electron Mobility Transistor) technology, which has aroused great interest in the scientific community and industry.The evolution of transistors played a crucial role in the development of high-frequency (HF) and medium-power analog circuits. Over time, transistors have gone through several generations, from Bipolar Junction Transistors (BJT) to Field Effect Transistors (FET), such as the Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET). However, for HF and medium power applications, High Electron Mobility Transistors (HEMT) have become a preferred choice due to their excellent gain linearity, low noise and high switching speed characteristics. HEMT and MISHEMT devices are based on heterojunction, which provides greater charge carrier mobility and offers significant advantages over conventional transistors.This research project proposes, in an unprecedented way, the characterization of MISHEMT with a view to its application in high frequency and medium power analog blocks, which will be carried out through electrical measurements and simulation of devices and circuits. Currently, this type of study is proving to be quite relevant as it can enable greater versatility at the device level in the design of modern circuits with the desired characteristics, which enables significant advances in the most diverse areas, such as aerospace and telecommunications. An exchange period at an international research institute is also planned to deepen knowledge in the area.