Electrical characterization of advanced nanodevices

• Grant number: 15/23793-1
• Support type: Scholarships abroad - Research
• Effective date (Start): April 01, 2016
• Effective date (End): June 30, 2016
• Field of knowledge: Engineering - Electrical Engineering
• Principal Investigator: João Antonio Martino
• Grantee: João Antonio Martino
• Host: Cor Claeys
• Home Institution: Escola Politécnica (EP). Universidade de São Paulo (USP). São Paulo , SP, Brazil
• Local de pesquisa : IMEC Belgium, Belgium

Abstract

With the improvement of integrated circuit fabrication technology, the dimensions of the transistors were reduced to nanometric scales where problems such as short channel effect and the high power dissipation in the device became critical. In order to minimize the problem of short channel effect, new structural alternative to replace the traditional planar single gate MOSFET transistor for multiple gates, such as triple gate FinFET nanodevice (also known as 3D transistor) was proposed.However, to minimize the power dissipated is required the advent of a technology that has its closest possible behavior of an ideal switch, i.e., with the subthreshold slope less than 60mV/dec at room temperature. In this context, arise tunneling field effect transistors (TFET), which in addition to being compatible with CMOS technology, present very different working principle. In these devices the electric current is composed of carriers that tunneling from source valence band to the channel conduction band instead of the traditional mechanism drift/diffusion from source to drain normally found in the classical MOS transistors, which enables to TFET nanodevice behave as an ideal closest to the key.The research stage of 3 months proposed in this project, it is going to be held at Imec/Belgium (a major research centers in microelectronics/nanoelectronics of Europe) and aims to study experimentally the more advanced versions of these new nanodevices. The nanodevices to be study will be the germanium channel FinFET (the previous one was of silicon) and the III-V source TFET (the previous one was of silicon or SiGe) that were newly fabricated and require further study. Analog characteristics of the device like Early voltage, intrinsic voltage gain and unit gain frequency and its potential for use in advanced integrated circuits for the next decade will be studied. (AU)