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Study and electrical characterization of FinFET transistors for space application

Grant number: 17/25336-2
Support type:Scholarships in Brazil - Scientific Initiation
Effective date (Start): April 01, 2018
Effective date (End): December 31, 2018
Field of knowledge:Engineering - Electrical Engineering - Electrical, Magnetic and Electronic Measurements, Instrumentation
Principal Investigator:Paula Ghedini Der Agopian
Grantee:Welder Fernandes Perina
Home Institution: Universidade Estadual Paulista (UNESP). Campus Experimental São João da Boa Vista. São João da Boa Vista , SP, Brazil

Abstract

With the advancement of MOSFET technology, the control of the charges in the channel region becomes increasingly difficult and complex. The multi-gates SOI MOSFETs (Silicon-On-Insulator), also known as FinFET transistors, appear as an alternative to planar ones because of their better electrostatic coupling between gate and channel, which results in higher immunity to short-channel effects. One of the important applications of advanced integrated circuits is their use in equipment and circuits submitted to a radiation environment for medical and aerospace applications. In this project will be carried out the theoretical and experimental study of the FinFETs transistors submitted to radiation. (AU)