| Grant number: | 11/03864-0 |
| Support type: | Scholarships in Brazil - Master |
| Effective date (Start): | March 01, 2012 |
| Effective date (End): | January 31, 2014 |
| Field of knowledge: | Engineering - Electrical Engineering - Electrical Materials |
| Principal Investigator: | Paula Ghedini Der Agopian |
| Grantee: | Caio Cesar Mendes Bordallo |
| Home Institution: | Campus de São Bernardo do Campo. Centro Universitário da FEI (UNIFEI). Fundação Educacional Inaciana Padre Sabóia de Medeiros (FEI). São Bernardo do Campo , SP, Brazil |
| Associated research grant: | 08/05792-4 - Design, fabrication and characterization of FinFET transistors, AP.TEM |
Abstract As devices are scaled down, the charge control in the channel region becomes more difficult. Silicon-On-Insulator (SOI) multiple gate devices appear as an alternative to replace planar-transistor, as it provides better charge control and, consequently, higher short-channel effects (SCE) immunity. Besides the improved SCE control, it is known that SOI technology presents a better response for radiation effects when compared to conventional MOSFETs. Focusing on space applications, proton radiation is one of the most important effects to be studied.In this work, a theoretical and experimental study of the proton radiation influence on SOI multiple gate devices is proposed, aiming to combine the advantage of the higher radiation immunity of SOI technology with the better performance of multiple gate devices. (AU) | |