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Study of proton radiation effects in SOI MOSFETs multiple gates transistors

Grant number: 11/03864-0
Support type:Scholarships in Brazil - Master
Effective date (Start): March 01, 2012
Effective date (End): January 31, 2014
Field of knowledge:Engineering - Electrical Engineering - Electrical Materials
Principal Investigator:Paula Ghedini Der Agopian
Grantee:Caio Cesar Mendes Bordallo
Home Institution: Campus de São Bernardo do Campo. Centro Universitário da FEI (UNIFEI). Fundação Educacional Inaciana Padre Sabóia de Medeiros (FEI). São Bernardo do Campo , SP, Brazil
Associated research grant:08/05792-4 - Design, fabrication and characterization of FinFET transistors, AP.TEM

Abstract

As devices are scaled down, the charge control in the channel region becomes more difficult. Silicon-On-Insulator (SOI) multiple gate devices appear as an alternative to replace planar-transistor, as it provides better charge control and, consequently, higher short-channel effects (SCE) immunity. Besides the improved SCE control, it is known that SOI technology presents a better response for radiation effects when compared to conventional MOSFETs. Focusing on space applications, proton radiation is one of the most important effects to be studied.In this work, a theoretical and experimental study of the proton radiation influence on SOI multiple gate devices is proposed, aiming to combine the advantage of the higher radiation immunity of SOI technology with the better performance of multiple gate devices. (AU)