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Nanodevices behavior on MOSFET technology and/or compatible technologies

Grant number: 16/24045-1
Support type:Research Grants - Visiting Researcher Grant - International
Duration: April 08, 2017 - May 07, 2017
Field of knowledge:Engineering - Electrical Engineering
Principal Investigator:João Antonio Martino
Grantee:João Antonio Martino
Visiting researcher: Cor Claeys
Visiting researcher institution: IMEC Belgium, Belgium
Home Institution: Escola Politécnica (EP). Universidade de São Paulo (USP). São Paulo , SP, Brazil

Abstract

With the continuous reduction of devices, CMOS technology manufacturing, which currently reached nanometric scales, has been faced with problems such as short channel effects. As an alternative to this technology, industries have replaced conventional CMOS technology for silicon on insulator (SOI) technology and multi-gate structures (MuGFETs). However, for dimensions below 22nm even this technology has reached its limit of escalation. Due to the limit of this scaling, new alternatives have been studied to extend the use of MOS technology and others to replace them. Among the alternatives that are currently used by the largest manufacturers of ICs (IBM, Intel, STMicroelectronics, etc.) we can mention UTBB SOI devices and FinFET. Among those alternatives that can replace MOSFET technology in future technological nodes, we can mention the tunnel field effect transistor (TFET), which is a silicon based device (Si, Ge or III-V but integrated in silicon) and compatible with MOS technology, but with a different operating principle. The coming of Prof. Dr. Cor Claeys will be of extreme importance because Prof. Claeys is one of the world's leading Researchers / Teachers in the field of semiconductor devices, with more than 1100 publications. In addition, he has led a number of research groups within Imec in Belgium (one of Europe's 2 largest microelectronics / nanoelectronics research centers) where he is involved with the latest technologies. Thus, the coming of prof. Cor Claeys will also allow us to know more about the manufacturing technology of the new FinFETs (Germanium channel) and TFETs (manufactured with material III-V) that will be very useful to follow the evolution of these nanodevices and thus assist me in the orientation of dissertations/thesis in Brazil. (AU)