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Low-frequency noise measurements on SOI FinFETs operating as biosensitive elements

Grant number: 19/23283-4
Support type:Scholarships abroad - Research Internship - Doctorate
Effective date (Start): March 01, 2020
Effective date (End): February 28, 2021
Field of knowledge:Engineering - Electrical Engineering
Principal Investigator:João Antonio Martino
Grantee:Carlos Augusto Bergfeld Mori
Supervisor abroad: Pol Van Dorpe
Home Institution: Escola Politécnica (EP). Universidade de São Paulo (USP). São Paulo , SP, Brazil
Local de pesquisa : University of Leuven (KU Leuven), Belgium  
Associated to the scholarship:17/26489-7 - Project and fabrication of a BE SOI Tunnel-FET as biosensitive element, BP.DR

Abstract

Biosensors play a fundamental role on the improvement of life expectation and its quality in present-day society, being extremely important to monitor in real time the development of diseases and even to prevent high-risk biological threats. Among the biosensitive platforms that are being studied and developed, micro and nanoelectronics devices built on SOI (Silicon-On-Insulator) substrates show great potential.This research project proposes the electrical characterization of a SOI FinFET device adapted for use as a biosensitive platform, in which its performance and physical principles will be evaluated from the observation of the transistors characteristic performance curves (inserted or not in biological medium) and from numerical simulations to study their physics. Besides the extraction of basic parameters, this project aims to study in detail the low-frequency noise in this kind of devices, since its behavior is so far not well stablished in the literature.