Tansistor based on spintronics: topological characterization and ballistic transport in topological insulators

• Grant number: 14/12357-3
• Support Opportunities: Scholarships in Brazil - Doctorate
• Start date: September 01, 2014
• End date: April 30, 2018
• Field of knowledge: Physical Sciences and Mathematics - Physics - Condensed Matter Physics
• Agreement: Coordination of Improvement of Higher Education Personnel (CAPES)
• Principal Investigator: Adalberto Fazzio
• Grantee: Carlos Augusto Mera Acosta
• Host Institution: Instituto de Física (IF). Universidade de São Paulo (USP). São Paulo , SP, Brazil
• Associated scholarship(s): 16/04496-9 - Big-data analytics for materials science: search for new topological insulators, BE.EP.DR

Abstract

Systems with non-trivial topological phases have insulating bulk, but exhibit channels of the conductivity located at the surface (or edge for a 2D system), which is a property of the topology of the system. Since the surface states are protected by this topology, the channel of the conductivity are free from backscattering, which makes the topological insulators ideal for application in spintronics. The realization of a spintronic device type transistor using topological insulators is not trivial, because there are inherent difficulties in achieving the transport measurements. In this project, we will studied the ballistic electron transport in systems with non-trivial topological phases, proposing a system that has the electronic conditions to enable the construction of a digital transistor using spin as a basic element for control of the transport properties of the system. (AU)

Scientific publications

(5)

(References retrieved automatically from Web of Science and SciELO through information on FAPESP grants and their corresponding numbers as mentioned in the publications by the authors)

ACOSTA, CARLOS MERA; LIMA, MATHEUS P.; DA SILVA, ANTONIO J. R.; FAZZIO, A.; LEWENKOPF, C. H.. Tight-binding model for the band dispersion in rhombohedral topological insulators over the whole Brillouin zone. Physical Review B, v. 98, n. 3, JUL 5 2018. (14/12357-3)

ACOSTA, C. MERA; BABILONIA, O.; ABDALLA, L.; FAZZIO, A.. Unconventional spin texture in a noncentrosymmetric quantum spin Hall insulator. Physical Review B, v. 94, n. 4, JUL 15 2016. (14/12357-3)

ACOSTA, C. MERA; BABILONIA, O.; ABDALLA, L.; FAZZIO, A.. Unconventional spin texture in a noncentrosymmetric quantum spin Hall insulator. PHYSICAL REVIEW B, v. 94, n. 4, p. 5-pg., 2016-07-15. (14/12357-3)

ACOSTA, CARLOS MERA; FAZZIO, ADALBERTO. Spin-Polarization Control Driven by a Rashba-Type Effect Breaking the Mirror Symmetry in Two-Dimensional Dual Topological Insulators. Physical Review Letters, v. 122, n. 3, JAN 25 2019. (17/02317-2, 14/12357-3)

ACOSTA, CARLOS MERA; LIMA, MATHEUS P.; DA SILVA, ANTONIO J. R.; FAZZIO, A.; LEWENKOPF, C. H.. Tight-binding model for the band dispersion in rhombohedral topological insulators over the whole Brillouin zone. PHYSICAL REVIEW B, v. 98, n. 3, p. 8-pg., 2018-07-05. (14/12357-3)

Academic Publications

(References retrieved automatically from State of São Paulo Research Institutions)

ACOSTA, Carlos Augusto Mera. Spintronic transistor: discovery and characterization of topological insulators. 2018. Doctoral Thesis - Universidade de São Paulo (USP). Instituto de Física (IF/SBI) São Paulo.