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Electronic properties: interfaces between topological insulators (TI-TI)

Grant number: 16/14011-2
Support type:Scholarships in Brazil - Post-Doctorate
Effective date (Start): November 01, 2016
Effective date (End): October 31, 2019
Field of knowledge:Physical Sciences and Mathematics - Physics - Condensed Matter Physics
Principal researcher:Adalberto Fazzio
Grantee:Marcio Jorge Teles da Costa
Home Institution: Centro de Engenharia, Modelagem e Ciências Sociais Aplicadas (CECS). Universidade Federal do ABC (UFABC). Ministério da Educação (Brasil). Santo André , SP, Brazil


In this project we will investigate the behavior of electronic states at the interface of two topological insulators(TI). Topological insulators are characterized by the existence of metallic states, localized at its interface, which are topologically protected. Such states posses nontrivial transport properties being robust against perturbations that preserve time reversal symmetry. Several groups are dedicated to the investigation of topological insulators, nevertheless little have been done to understand how these metallic states interact at the interface of two different TI's. For a 3D material, its interface is a surface, several questions must be addressed: how the properties of the states depends on the thickness of the film?, is there any spin texture?, is there any changes depending on how they interact? These are important questions that are still opened and have not been well explored from the theoretical an experimental point of view. It is of major importance to comprehend such questions in order to find new materials for spintronics and other applications. (AU)

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Scientific publications (7)
(References retrieved automatically from Web of Science and SciELO through information on FAPESP grants and their corresponding numbers as mentioned in the publications by the authors)
FOCASSIO, BRUNO; SCHLEDER, GABRIEL R.; PEZO, ARMANDO; COSTA, MARCIO; FAZZIO, ADALBERTO. Dual topological insulator device with disorder robustness. Physical Review B, v. 102, n. 4, . (17/02317-2, 16/14011-2, 19/04527-0, 17/18139-6)
PEZO, ARMANDO; FOCASSIO, BRUNO; SCHLEDER, GABRIEL R.; COSTA, MARCIO; LEWENKOPF, CAIO; FAZZIO, ADALBERTO. Disorder effects of vacancies on the electronic transport properties of realistic topological insulator nanoribbons: The case of bismuthene. PHYSICAL REVIEW MATERIALS, v. 5, n. 1, . (17/02317-2, 19/04527-0, 17/18139-6, 16/14011-2)
COSTA, MARCIO; SCHLEDER, GABRIEL R.; NARDELLI, MARCO BUONGIORNO; LEWENKOPF, CAIO; FAZZIO, ADALBERTO. Toward Realistic Amorphous Topological Insulators. Nano Letters, v. 19, n. 12, p. 8941-8946, . (16/14011-2, 17/02317-2, 17/18139-6)
FOCASSIO, BRUNO; SCHLEDER, GABRIEL R.; COSTA, MARCIO; FAZZIO, ADALBERTO; LEWENKOPF, CAIO. Structural and electronic properties of realistic two-dimensional amorphous topological insulators. 2D MATERIALS, v. 8, n. 2, . (16/14011-2, 17/02317-2, 19/04527-0, 17/18139-6)
PEZO, ARMANDO; LIMA, MATHEUS P.; COSTA, MARCIO; FAZZIO, ADALBERTO. Electronic transport properties of MoS2 nanoribbons embedded in butadiene solvent. Physical Chemistry Chemical Physics, v. 21, n. 21, p. 11359-11366, . (17/02317-2, 16/14011-2)
COSTA, MARCIO; SCHLEDER, GABRIEL R.; MERA ACOSTA, CARLOS; PADILHA, ANTONIO C. M.; CERASOLI, FRANK; BUONGIORNO NARDELLI, MARCO; FAZZIO, ADALBERTO. Discovery of higher-order topological insulators using the spin Hall conductivity as a topology signature. NPJ COMPUTATIONAL MATERIALS, v. 7, n. 1, . (18/05565-0, 18/11856-7, 16/14011-2, 17/02317-2, 17/18139-6)
PEZO, ARMANDO; ZANOLLI, ZEILA; WITTEMEIER, NILS; ORDEJON, PABLO; FAZZIO, ADALBERTO; ROCHE, STEPHAN; GARCIA, JOSE H.. Manipulation of spin transport in graphene/transition metal dichalcogenide heterobilayers upon twisting. 2D MATERIALS, v. 9, n. 1, . (16/14011-2)

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