Characterization of strained semiconductor structures by Raman spectroscopy
Nanoelectronics and nanoscale electrochemistry: fundaments and applications
Heterostructures in semiconducting nanowires: nanometric light emitters studied by...
Grant number: | 16/13065-1 |
Support Opportunities: | Scholarships in Brazil - Scientific Initiation |
Start date: | August 01, 2016 |
End date: | December 31, 2016 |
Field of knowledge: | Physical Sciences and Mathematics - Physics - Condensed Matter Physics |
Principal Investigator: | Odilon Divino Damasceno Couto Júnior |
Grantee: | Luis Henrique Tenorio Bandoria |
Host Institution: | Instituto de Física Gleb Wataghin (IFGW). Universidade Estadual de Campinas (UNICAMP). Campinas , SP, Brazil |
Associated research grant: | 12/11382-9 - Optical modulation of semiconductor nanostructures using surface acoustic waves, AP.JP |
Abstract We will investigate the vibrational properties of heterostructured InAsP and InAsP/InP nanowires by Raman spectroscopy. Nanowires were grown by VLS method catalized with gold nanoparticles. In InAsP nanowires, we will identify the Raman active modes for different alloy compositions by selecting the incident and scattered light polarization conditions. In the heterostructured nanowires, the strain distribution along the nanowire will be investigated. The strain will be identified by the shifting of the Raman peaks of the different modes of vibration. | |
News published in Agência FAPESP Newsletter about the scholarship: | |
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