Research Grants 12/22617-7 - Nanofios, Fotoluminescência - BV FAPESP
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Optical properties of InAs nanowires

Abstract

In this work, the optical and the lattice vibration properties of InAs-based nanowires will be investigated using photoluminescence and Raman scattering spectroscopy. The nanowire samples are grown by the vapor-liquid-solid method in a chemical beam epitaxy reactor under growth conditions where only the wurtzite phase is favored. We will study the electronic structure of wurtzite InAs in several sets of samples which contain pure InAsand core-shell InAs/InP structures. The growth of a thin InP shell around the InAs core reduces the surface effects that are crucial for optical emissions - mainly in narrow band gap semiconductors. Besides the band gap, higher energy transitions related to the valence band splitting, as well as the high energy conduction band at the center of the Brillouin zone in the wurtzite phase will be investigated. The effectof strain arising from the shell in these core-shell nanowires will be analyzed by using Raman scattering. (AU)

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Scientific publications
(References retrieved automatically from Web of Science and SciELO through information on FAPESP grants and their corresponding numbers as mentioned in the publications by the authors)
MOLLER, M.; OLIVEIRA, D. S.; SAHOO, P. K.; COTTA, M. A.; IIKAWA, F.; MOTISUKE, P.; MOLINA-SANCHEZ, A.; DE LIMA, JR., M. M.; GARCIA-CRISTOBAL, A.; CANTARERO, A.. Fermi energy dependence of the optical emission in core/shell InAs nanowire homostructures. Nanotechnology, v. 28, n. 29, . (15/16611-4, 12/22617-7, 16/16365-6, 13/02300-1)

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