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Optoelectronic devices based on semiconductor structures

Grant number: 15/23786-5
Support Opportunities:Scholarships in Brazil - Post-Doctoral
Start date: September 01, 2016
End date: August 31, 2018
Field of knowledge:Physical Sciences and Mathematics - Physics - Condensed Matter Physics
Agreement: Coordination of Improvement of Higher Education Personnel (CAPES)
Principal Investigator:Marcos Henrique Degani
Grantee:Wojciech Julian Pasek
Host Institution: Faculdade de Ciências Aplicadas (FCA). Universidade Estadual de Campinas (UNICAMP). Limeira , SP, Brazil

Abstract

Intermediate band solar cell is a new concept for which there is absorption of most of the solar spectrum in a single cell. One way to implement this intermediate band is to introduce layers of quantum dots in a semiconductor matrix so that the electronic levels confined of these quantum dots generate a band of energy between the valence and conduction bands of the host material, enabling the absorption of the parcel photons with energy less than the gap of the active layer. In this project we will study intermediate band solar cells using semiconductor structures containing quantum dots. In order to discover the peculiarities of the system that increase the efficiency of the cell, we must first calculate the band structure of a realistic structure. This means including in the calculation the shape of the quantum dots, stress due to interfaces of different materials, coupling bands, etc. The objective of this project is to give theoretical support to the development of these new solar cells constructed of semiconductor nanosystems where efficiency is higher than the solar cells used today, known as tandem cells, which are also made of III-V semiconductors. (AU)

News published in Agência FAPESP Newsletter about the scholarship:
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Scientific publications
(The scientific publications listed on this page originate from the Web of Science or SciELO databases. Their authors have cited FAPESP grant or fellowship project numbers awarded to Principal Investigators or Fellowship Recipients, whether or not they are among the authors. This information is collected automatically and retrieved directly from those bibliometric databases.)
PASEK, W. J.; MAIALLE, M. Z.; DEGANI, M. H.. Application of the Landau-Zener-Stuckelberg-Majorana dynamics to the electrically driven flip of a hole spin. Physical Review B, v. 97, n. 11, . (15/23786-5)
PASEK, W. J.; MAIALLE, M. Z.; DEGANI, M. H.. Application of the Landau-Zener-Stuckelberg-Majorana dynamics to the electrically driven flip of a hole spin. PHYSICAL REVIEW B, v. 97, n. 11, p. 14-pg., . (15/23786-5)