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Optoelectronic devices based on semiconductor structures

Grant number: 15/23786-5
Support Opportunities:Scholarships in Brazil - Post-Doctorate
Effective date (Start): September 01, 2016
Effective date (End): August 31, 2018
Field of knowledge:Physical Sciences and Mathematics - Physics - Condensed Matter Physics
Acordo de Cooperação: Coordination of Improvement of Higher Education Personnel (CAPES)
Principal Investigator:Marcos Henrique Degani
Grantee:Wojciech Julian Pasek
Host Institution: Faculdade de Ciências Aplicadas (FCA). Universidade Estadual de Campinas (UNICAMP). Limeira , SP, Brazil


Intermediate band solar cell is a new concept for which there is absorption of most of the solar spectrum in a single cell. One way to implement this intermediate band is to introduce layers of quantum dots in a semiconductor matrix so that the electronic levels confined of these quantum dots generate a band of energy between the valence and conduction bands of the host material, enabling the absorption of the parcel photons with energy less than the gap of the active layer. In this project we will study intermediate band solar cells using semiconductor structures containing quantum dots. In order to discover the peculiarities of the system that increase the efficiency of the cell, we must first calculate the band structure of a realistic structure. This means including in the calculation the shape of the quantum dots, stress due to interfaces of different materials, coupling bands, etc. The objective of this project is to give theoretical support to the development of these new solar cells constructed of semiconductor nanosystems where efficiency is higher than the solar cells used today, known as tandem cells, which are also made of III-V semiconductors. (AU)

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Scientific publications
(References retrieved automatically from Web of Science and SciELO through information on FAPESP grants and their corresponding numbers as mentioned in the publications by the authors)
PASEK, W. J.; MAIALLE, M. Z.; DEGANI, M. H.. Application of the Landau-Zener-Stuckelberg-Majorana dynamics to the electrically driven flip of a hole spin. Physical Review B, v. 97, n. 11, . (15/23786-5)

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