| Grant number: | 17/18181-2 |
| Support Opportunities: | Scholarships in Brazil - Scientific Initiation |
| Start date: | December 01, 2017 |
| End date: | June 30, 2018 |
| Field of knowledge: | Physical Sciences and Mathematics - Physics - Nuclear Physics |
| Principal Investigator: | Marcilei Aparecida Guazzelli |
| Grantee: | Alexis Cristiano Vilas Bôas |
| Host Institution: | Centro Universitário FEI (UNIFEI). Campus de São Bernardo do Campo. São Bernardo do Campo , SP, Brazil |
Abstract Electronic devices exposed to ionizing radiation can be damaged and can change the properties that characterize the device by modifying the electrical parameters and, in the case of memories or processors, can modify the information contained in these devices. Faced with this problem, the development of radiation-resistant electronic devices and their qualification as to be more tolerant to the effects of ionizing radiation requires qualified personnel with specific knowledge of the physical mechanisms acting on the devices when exposed to radiation. To study the behavior of devices under these conditions, it is necessary to know how to characterize them properly, according to the damage caused by a certain dose of radiation, and by the type of ionizing radiation. It is worth emphasizing that this topic is extremely important for this strategic area of research to be self - sufficient in our country and also that the FEI University Center participates in the most important national project, funded by FINEP - CITAR: Integrated Circuits Tolerant to Radiation - which aims to Consolidate this knowledge in Brazil. This research project aims to study the effects of ionizing radiation from X-rays in conventional electronic devices, specifically the Rectifier and Zener diodes. The diodes will be exposed to different dose rates of X-ray radiation by modifying the exposure time and intensity of the X-ray beam in order to study how the radiation dose accumulated in the material influences the characteristics of the devices and Circuit signal. In this way, it will be possible to correlate the physical mechanisms responsible for the radiation effects in the devices with the changes in the characteristic parameters, generating training of electrical engineers in this strategic area for Brazil. (AU) | |
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