Development of a UV photodetector using a Schottky diode and a transistor based on ZnO by spray pyrolysis

• Grant number: 18/04169-3
• Support Opportunities: Scholarships in Brazil - Master
• Start date: June 01, 2018
• End date: September 14, 2020
• Field of knowledge: Engineering - Materials and Metallurgical Engineering
• Agreement: Coordination of Improvement of Higher Education Personnel (CAPES)
• Principal Investigator: Neri Alves
• Grantee: Douglas Henrique Vieira
• Host Institution: Faculdade de Ciências e Tecnologia (FCT). Universidade Estadual Paulista (UNESP). Campus de Presidente Prudente. Presidente Prudente , SP, Brazil
• Associated scholarship(s): 19/14366-3 - Study of beta-Ga2O3 schottky diode aiming solar-blind applications, BE.EP.MS

Abstract

High values of ultraviolet radiation expose in tropical and subtropical countries, presents a risk to public health, mainly on the possibility of skin cancer. The monitoring of UV radiation exposition by thin, flexible and printable circuits it's a fascinating proposal. This requires low cost materials that can be process by solution. The ZnO is a semiconductor that stands out in this respect. It has high mobility value and is promising for UV sensor applications because it has a band gap of 3,3 eV, that corresponds to the beginning of the UV light spectrum (320~400 nm). The use of the spray pyrolysis technique to obtain ZnO is interesting because allows it to be extracted from an organic precursor. This material can be used to develop a Schottky diode that can act as a good UV sensor. In addition, it can be also used to develop a transistor, an extremely important electronic component that its present in almost all of the electronic circuits. The integration of a Schottky diode and a thin film transistor forms a photodetector capable of "preprocessing" the signal, regulating the output voltage and selecting the intensity and wavelength to be detected. (AU)

Scientific publications

(References retrieved automatically from Web of Science and SciELO through information on FAPESP grants and their corresponding numbers as mentioned in the publications by the authors)

VIEIRA, DOUGLAS HENRIQUE; OZORIO, MAIZA DA SILVA; NOGUEIRA, GABRIEL LEONARDO; FUGIKAWA-SANTOS, LUCAS; ALVES, NERI. UV-photocurrent response of zinc oxide based devices: Application to ZnO/PEDOT:PSS hydrid Schottky diodes. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, v. 121, JAN 2021. (18/04169-3, 19/01671-2, 19/08019-9)

VIEIRA, DOUGLAS HENRIQUE; NOGUEIRA, GABRIEL LEONARDO; MORAIS, ROGERIO MIRANDA; FUGIKAWA-SANTOS, LUCAS; SEIDEL, KELI FABIANA; ALVES, NERI. ZnO-based electrolyte-gated transistor (EGT) applied as multiparametric UV-sensing device. SENSORS AND ACTUATORS A-PHYSICAL, v. 347, p. 9-pg., 2022-11-11. (19/08019-9, 20/12282-4, 18/02037-2, 18/04169-3)

Academic Publications

(References retrieved automatically from State of São Paulo Research Institutions)

VIEIRA, Douglas Henrique. Development of a UV photodetector using a Schottky diode and a transistor based on ZnO by spray pyrolysis. 2020. Master's Dissertation - Universidade Estadual Paulista (Unesp). Faculdade de Ciências e Tecnologia. Presidente Prudente Presidente Prudente.