Electrical characterization and modeling of current voltage characteristic curves of non-specific OTFTs sensors for high concentrations of MIB and geo

• Grant number: 18/20097-2
• Support type: Scholarships in Brazil - Scientific Initiation
• Effective date (Start): October 01, 2018
• Effective date (End): April 30, 2019
• Field of knowledge: Engineering - Electrical Engineering
• Cooperation agreement: SABESP
• Principal Investigator: Fernando Josepetti Fonseca
• Grantee: Luca Pantaleoni Di Natale
• Home Institution: Escola Politécnica (EP). Universidade de São Paulo (USP). São Paulo , SP, Brazil
• Company: Universidade de São Paulo (USP). Escola Politécnica (EP)
• Associated research grant: 13/50440-7 - Online water quality analysis (ACQUA-OnLine), AP.PITE

Abstract

Organic thin film transistors (OTFTs) are devices composed of three electrodes, the current IDS circulating only by drain (D) and source (S), while the gate electrode (G) gate) is responsible for modulating this current by voltage. The two main polarization voltages are applied to the drain and the gate (VDS and VGS, respectively) in relation to the reference electrode, the source, responsible for generating the characteristic curves of IDSx VDS for a set of VGSe values of IDSx VGS characteristics for one set of values of VDS [1,2]. Therefore, the electrical characterization of OTFTs involves the limitation of the extremes of the range and the maximum compliance current. In addition, the step of varying each of the voltages of the transistor, i.e. VGS and VDS, must be defined. However, the transport of cargo in these devices must consider that the carriers of cargo should make jumps in distant places according to a determined statistical distribution and transit through discrete energy levels [3]. In this context, it is proposed the definition of electrical characterization parameters aiming at the modeling of OTFT transcharacteristic curves for extraction of its electrical parameters. From the knowledge acquired in this project and from measurements obtained in the presence or absence of MIB and GEO, the effect of these contaminants on the operation of the transistor can be understood.