| Grant number: | 19/20857-0 |
| Support type: | Scholarships in Brazil - Post-Doctorate |
| Effective date (Start): | June 01, 2020 |
| Effective date (End): | May 31, 2022 |
| Field of knowledge: | Physical Sciences and Mathematics - Physics - Condensed Matter Physics |
| Principal Investigator: | Adalberto Fazzio |
| Grantee: | Felipe David Crasto de Lima |
| Home Institution: | Centro Nacional de Pesquisa em Energia e Materiais (CNPEM). Ministério da Ciência, Tecnologia, Inovações e Comunicações (Brasil). Campinas , SP, Brazil |
Abstract Recently, the climatic and economic changes of the world have lead to a search for materials more energetically efficient. Within this scenario, two-dimensional materials and topological phases of matter are prominent candidates to fulfill this task. Currently, topological materials are transiting from the theoretical physics to the experimental chemistry, where focused applications regarding energy consumption reduction, and spin to charge conversion has already been proven experimentally. Concomitantly, following the industrial miniaturization tendencies, and enhanced quantum effects, two-dimensional materials are a key element in future device designs.This project has three main goals, (i) the exploration of a Brazilian, naturally occurring, class of two-dimensional topological materials; (ii) predicting new two-dimensional materials and its applications; and (iii) the exploration of interface phenomena in topological insulator materials. From (i) within first-principle calculations, we intend to unveil the stability of Jacutingaite related phases, a prominent topological material, while further explore its properties and applications. In (ii) a combination of Big-data analysis, machine-learning, and materials simulations approaches will be employed in order to predict new two-dimensional materials and lattices design. Furthermore, in (iii) by designing topological insulator surfaces with broken inversion symmetry we can achieve spin-textures from both topological and Rashba-effect origins. Such effects can add up increasing the Rashba-Edelstein effect, which is essential for efficient switching of interface ferromagnetic magnetization direction, for magnetic memory applications. (AU) | |