Terahertz time-domain spectroscopy for caracterization of optical conductivity in semiconductors.

• Grant number: 22/13325-4
• Support Opportunities: Scholarships in Brazil - Scientific Initiation
• Start date: December 01, 2022
• End date: August 25, 2023
• Field of knowledge: Physical Sciences and Mathematics - Physics - Condensed Matter Physics
• Principal Investigator: Jonathas de Paula Siqueira
• Grantee: Pedro Henrique Pereira Cardoso
• Host Institution: Instituto de Física Gleb Wataghin (IFGW). Universidade Estadual de Campinas (UNICAMP). Campinas , SP, Brazil

Abstract

Because of the strong interaction of terahertz radiation with free charges, the terahertz spectral region, located between 0.1 and 10 THz (0.41 to 41 meV), is extremely suitable for characterizing transport properties in bulk or nanoscale semiconductors. Because of its low energy per photon (0.41 to 41 meV) has also been widely used to characterize low energy excitations in complex materials such as the superconducting gap in thin films and magnons in antiferromagnetic materials. In this project, the student will use the temporal domain THz spectroscopy technique based on femtosecond lasers to characterize transport properties in doped semiconductor thin films.