| Grant number: | 23/06016-8 |
| Support Opportunities: | Scholarships in Brazil - Master |
| Start date: | August 01, 2023 |
| End date: | February 28, 2025 |
| Field of knowledge: | Physical Sciences and Mathematics - Physics - Condensed Matter Physics |
| Principal Investigator: | Alain André Quivy |
| Grantee: | Lucas Andrade Teixeira de Souza |
| Host Institution: | Instituto de Física (IF). Universidade de São Paulo (USP). São Paulo , SP, Brazil |
Abstract The objective of this project is to continue the research started in the first PhD thesis of ourgroup (defended on 05/09/2023) related to the fabrication of photovoltaic cells based onInAs/GaAs quantum dots deposited by molecular beam epitaxy (MBE) on GaAs substrates. Wewill try to improve the solar cells recently developed in our group in two ways. The firstconsists in optimizing the structure of the GaAs reference cell that serves as a host for the cellscontaining quantum dots. This will be done with computer simulations using the free softwareSCAPS and varying the type of structure (p-i-n or n-i-p) as well as the doping and thickness ofeach layer involved in the structure. The second way concerns the optimization of somegrowth parameters of the InAs/GaAs submonolayer quantum dots (SMLQDs) that were usedinstead of the conventional Stranski-Krastanov quantum dots (SKQDs) and have already madeit possible to obtain devices with better performance. These SMLQDs theoretically haveseveral advantages over SKQDs, such as a higher surface density, greater flexibility incontrolling their vertical size, and the absence of a wetting layer around the nanostructures.Because they are less common than SKQDs and have a more complex growth, theexperimental deposition conditions of SMLQDs still need to be determined with betterprecision. A good part of the main parameters has already been optimized in our group inrecent years, but we still need to adjust the doping of the SMLQDs themselves, which isextremely important to maximize the absorption of solar radiation having energy below theGaAs bandgap and, thus, try for the first time surpassing the efficiency of a GaAs reference cell(which has not been achieved by anyone so far). | |
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