Investigation of the Robustness of PMOS Power Transistors with Different Layouts Against Total Ionizing Dose and Single Event Effects for Applications in Critical Environments

• Grant number: 25/01910-8
• Support Opportunities: Scholarships in Brazil - Master
• Start date: July 01, 2025
• End date: February 28, 2027
• Field of knowledge: Physical Sciences and Mathematics - Physics - Nuclear Physics
• Principal Investigator: Marcilei Aparecida Guazzelli
• Grantee: Paulo Roberto Garcia Junior
• Host Institution: Centro Universitário FEI (UNIFEI). Campus de São Bernardo do Campo. São Bernardo do Campo , SP, Brazil
• Associated research grant: 23/16053-8 - Ionic Beam System for IRradiation and Applications (SAFIIRA), AP.R

Abstract

Exposure of electronic devices to ionizing radiation can cause damage that alters their electrical properties, impacting the performance and reliability of critical components such as memory units and processors. These alterations may modify electrical parameters or even corrupt stored information. To mitigate these effects, the development of more radiation-tolerant electronic devices is essential, along with the training of highly qualified personnel with in-depth knowledge of the physical mechanisms that affect these devices during radiation exposure. In this context, Brazil aims to advance its technological autonomy in strategic areas.This master's dissertation aims to investigate the effects of heavy ion incidence on PMOS power transistors (P-type Metal-Oxide-Semiconductor). The transistors to be characterized belong to the PPTLEXT06SOID4 integrated circuit, designed by researchers at the Renato Archer Center for Information Technology (CTI - Campinas) and manufactured by the National Center for Advanced Electronic Technology S.A. (CEITEC). The research involves exposing the transistors to different types of heavy ions, enabling a detailed study of the physical mechanisms that influence changes in the electrical characteristics of these power devices.Thus, it will be possible to correlate the causes of radiation-induced effects with variations in electrical parameters, as well as to evaluate device tolerance as a function of geometric differences for applications in extreme environments, such as aerospace embedded systems.This work continues the FAPESP project 2022/09131-0, which initiated the investigation of the effects of ionizing radiation from X-rays on the same device. Focusing on the cumulative effects of Total Ionizing Dose (TID), this study seeks to expand the understanding of the robustness of PMOS power transistors with different geometries under various radiation conditions. (AU)