Study of Low-dropout voltage regulators designed with SOI FinFETs and TFET-FinFETs transistors.

• Grant number: 25/03790-0
• Support Opportunities: Scholarships in Brazil - Master
• Start date: November 01, 2025
• End date: March 31, 2027
• Field of knowledge: Engineering - Electrical Engineering
• Principal Investigator: Paula Ghedini Der Agopian
• Grantee: Pedro Henrique Madeira
• Host Institution: Faculdade de Engenharia. Universidade Estadual Paulista (UNESP). Campus São João da Boa Vista. São João da Boa Vista , SP, Brazil

Abstract

The intense miniaturization of electronic devices, driven by demand from the semiconductor industry, requires new technologies to reduce the occupied area and the power dissipated in integrated circuits. In this context, SOI MOSFET technology has revolutionized the sector, enabling smaller transistors that are more resistant to short-channel effects and have lower junction capacitance.However, for technological nodes below 32 nm, multi-gate transistors, such as the SOI FinFET, have emerged. The FinFET structure is based on a vertical structure in the shape of a thin, tall fin covered by the dielectric and the gate material on the 3 sides of the fin, which promotes greater electrostatic coupling between the side gates to obtain better control of the charges in the channel.A possible solution to the power dissipation problem is the field-induced tunneling transistor (TFET), which operates with a different operating mechanism, the interband tunneling (BTBT), and allows faster switching with lower dissipation and power, behaving almost like an ideal switch with low off-state current. Although these devices were designed for digital applications, TFETs have excellent analog characteristics and are compatible with CMOS technology manufacturing.This work seeks to apply the SOI FinFET and TFET-FinFET technologies manufactured on the same wafer and following the same manufacturing process, in a low-dropout linear regulator (LDO) circuit. The behavior of the circuit with temperature variation will also be studied.