|Support type:||Scholarships in Brazil - Post-Doctorate|
|Effective date (Start):||October 01, 2005|
|Effective date (End):||September 30, 2008|
|Field of knowledge:||Engineering - Electrical Engineering|
|Principal Investigator:||Hugo Enrique Hernández Figueroa|
|Grantee:||Hugo Ricardo Jimenez Grados|
|Home Institution:||Centro de Componentes Semicondutores (CCS). Universidade Estadual de Campinas (UNICAMP). Campinas , SP, Brazil|
In this work, the main objective is the study of the Integration of SiGe Processes in a CMOS process. Thus, we will be able to search the use of the SiGe being aimed at to optimize the behavior of the technology of silicon and, in ours project, for application in the development of transponder in 915 MHz, being the SiGe technology a recent activity as it is reported by literature.This work if points out in the field of processes of manufacture of integrated circuitsand is guided to supply to the designers easiness the project of integrated circuits with the process of local CMOS manufacture (CCS) and integrated with SiGe processes aiming at high income and trustworthiness in the project of RF circuits. The polisilício SiGe is a material of recent production and characterization in the CCS.A project objective is to make a layout with structures of devices for characterization and measures of RF, besides including one chip of application as part of the development of transponder in 915 MHz.Being this first phase of study of the unknown intention to manufacture a process CMOS with the integration of the SiGe technology, first in some foundry (IHP) and later, possibly, in the CCS.