Characterization of Ultrathin Layers of High Dielectric Constant and Application in the Fabrication of High Performance MOS Structures

• Grant number: 10/09509-5
• Support Opportunities: Scholarships in Brazil - Post-Doctoral
• Start date: January 01, 2011
• End date: June 30, 2013
• Field of knowledge: Engineering - Electrical Engineering
• Principal Investigator: Sebastiao Gomes dos Santos Filho
• Grantee: Danilo Roque Huanca
• Host Institution: Escola Politécnica (EP). Universidade de São Paulo (USP). São Paulo , SP, Brazil
• Associated research grant: 08/05792-4 - Design, Fabrication and Characterization of FinFET Transistors, AP.TEM

Abstract

In this post doctorate work will be investigated ultrathin layers of Al2O3 AlSixOy, and TiSixOy TiAlxOy with high dielectric constant (k) for MOS gate with equivalent thickness in the range of 0.3 to 1nm. It will be fabricated MOS capacitors using Al2O3 AlSixOy, TiSixOy and TiAlxOy as gate dielectrics, obtained by sputtering in equipment type "RF magnetron" followed by the deposition of titanium nitride in the same chamber without breaking vacuum. It also will measure the characteristics of capacitance-voltage (CV), capacitance-time (Ct), current-voltage (IV) and physical measures such as: ellipsometry, Rutherford backscattering spectroscopy (RBS) mode resonance of oxygen and measured scattering X-ray Grazing-incidence small-angle x-ray scattering (GISAXS:.). A part of the research goal will be to study the evolution of physical and electrical characteristics of Al2O3 films, AlSixOy, and TiSixOy TiAlxOy due to heat treatments ranging from 450C to 1000C.