Electrical characterization of semiconductors nanostructures

Author(s)

Klaus Orian Vicaro

• Document type: Doctoral Thesis
• Press: Campinas, SP.
• Institution: Universidade Estadual de Campinas (UNICAMP). Instituto de Física Gleb Wataghin
• Defense date: 2008-02-12

Examining board members

Mônica Alonso Cotta; Evaldo Ribeiro; Flavio Orlando Plentz Filho; Fernando Iikawa; Varlei Rodrigues

• Advisor: Mônica Alonso Cotta; Peter Alexander Bleinroth Schulz

Abstract

In this work we characterized the electrical properties of InAs/InP semiconductor nanostructures, mainly quantum dots e quantum wires, obtained by Stranski-Krastanov growth mode using chemical beam epitaxy (CBE). Topography, electrical conductance, and current-voltage measurements with spatial resolution were performed on the grown structures using atomic force microscopy in conductive mode (C-AFM) with metalized tip. Mesa-like structures were processed on the samples used in C-AFM; electrical measurements at temperatures lower than 273 K were then acquired. Three-dimensional thermionic emission (non-homogeneous) transport was observed between the conductive tip and the InAs nanostructures. This suggests that the nanostructure neighborhood, formed by the wetting layer (WL), changes the barrier height configuration and makes it dependent on the voltage applied to the metal-semiconductor junction. On the other hand, the threshold voltage, defined as the voltage necessary to detect the lowest current level, varies with nanostructure size and shape; it is related to the nanostructure electronic state and also to the semiconductor electronic gap that is smaller for the larger nanostructures. Electrical conductance via hopping and random telegraphic noise (RTN) were observed at low temperatures on the devices fabricated via e-beam with dozens or hundreds of InAs/InP nanostructures. The Éfros-Shklovskii hopping transport occurs at higher temperatures (> 70 K) and low polarizations where the device carrier density is low and the coulombian interaction is strong. Increasing the polarization the hopping changes to the Mott variable range on 2D system, which correlates to the WL dimensionality ¿the conduction channel. The RTN appears in low temperatures (< 40 K) but only in those devices with nanostructures that allow carrier trapping. Numerical simulations using a heuristic model showed that few nanostructures can change the electrical transport in an ensemble with hundreds of them (AU)