Growth and characterization of stressed heterostructures of InxGa1-x-As/GaAs

Author(s)

Artemis Marti Ceschin

• Document type: Doctoral Thesis
• Press: São Carlos.
• Institution: Universidade de São Paulo (USP). Instituto de Física de São Carlos (IFSC/BT)
• Defense date: 1992-12-17

Examining board members

Maximo Siu Li; Andre Bohomoletz Henriques; Paulo Motisuke; Luiz Antonio de Oliveira Nunes; Suhaila Maluf Shibli

• Advisor: Maximo Siu Li

Abstract

InxGa1-xAs strained heterostructures were grown on GaAs (100) by Molecular Beam Epitaxy (MBE). Indium concentration (x), 2D-3D growth mode transition thickness and critical thickness (hc) were determined by \"in situ\" RHEED analysis. Hc and 2D-3D growth mode transition thickness values were verified to depend on In concentration and substrate temperature. The dependence of the InxGa1-xAs /GaAs simple and multiple quantum wells (SQW and MQW) PL optical quality on the GaAs (100) substrate misorientation was also studied. The SQW interfaces were investigated by Transmission Eletronic Microscopy (TEM). Some double-barrier structures (AlGaAs/GaAs/InAs/GaAs/AlGaAs was also grown and optically characterized (AU)