Study and optimization of the structural, optical and electrical properties of PECVD-deposited SiOxNy, films for applications in MOS devices, microstructures and waveguides.

Author(s)

Marco Isaías Alayo Chávez

• Document type: Doctoral Thesis
• Press: São Paulo.
• Institution: Universidade de São Paulo (USP). Escola Politécnica (EP/BC)
• Defense date: 2000-12-13

Examining board members

Inês Pereyra; José Alexandre Diniz; Rogerio Furlan; Nilton Itiro Morimoto; Jacobus Willibrordus Swart

• Advisor: Inês Pereyra

Abstract

In this work we present a study on the optimization of the physical, mechanical and electrical properties of silicon dioxide (Si´O IND.2´) and silicon oxynitride (Si´O IND.x´´N IND.y´) films deposited by the plasma enhanced chemical vapor deposition technique (PECVD). The main goal is obtain, at low temperatures, materials with adequate properties for application on Metal-Oxide-Semiconductor devices, optoelectronics and micro-electro-mechanical systems (MEMS). For the MOS devices fabricated utilizing the Si´O IND.2´ films developed previously, which have shown excellent structural and compositional properties, a study in order to decrease the effective charge in the bulk of the gate dielectric as well as at the insulator/semiconductor interface was performed. For developing of MEMS, a study was accomplished to optimize deposition conditions for the growth of thick films, above 1 ´MICROMETER´, with high resistance to KOH etch and with minimal mechanical stress. The feasibility of application of the developed material was demonstrated by the fabrication of self-sustained membranes up to 0.8´cm POT.2´ in area. Finally for applications in optoelectronics, a study in order to obtain an accurate control of the refractive index, fundamental for waveguide fabrication was performed. With the established set of optimized deposition parameters low attenuation ARROW-B waveguides were fabricated and characterized. (AU)