Películas de Si-ah: construção de um reator PECVD, estudo de técnicas de deposição e caracterizacao das películas.

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Author(s):	João Paulo Bottecchia Total Authors: 1
Document type:	Master's Dissertation
Press:	São Paulo.
Institution:	Universidade de São Paulo (USP). Escola Politécnica (EP/BC)
Defense date:	1994-11-11
Examining board members:	Adnei Melges de Andrade; Inês Pereyra
Advisor:	Adnei Melges de Andrade
Abstract
The fast growth of microelectronics in the last years is directly related to development of new materials, among them a-Si:H and its alloys. However, a broad field of studies is open to understand their physical properties to improve material quality and device performance. Many techniques have been used to obtain these materials. Among others, PECVD is outstanding due to the possibility to grow films in different types of substrates, in large áreas, anda t low temperatures. Aiming the study of the properties of a-Si:H and its alloys, a PECVD reactor was built. Inovations were introduced in the reactor to investigatethe influence of deposition parameters on optoelectronics properties of the materials. The introduced changes was studied by the characterization of undoped amorphous silicone deposited in the reactor. Infrared and visible absorption measurements were carried out to obtian the optical gap, hydrogen contentes and bond configuration of the incorporated hydrogen; dark conductivity and photoconductivity were measured in the samples, to asses film quality. (AU)