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| Author(s): |
Guilherme Matos Sipahi
Total Authors: 1
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| Document type: | Doctoral Thesis |
| Press: | São Paulo. |
| Institution: | Universidade de São Paulo (USP). Instituto de Física (IF/SBI) |
| Defense date: | 1997-09-10 |
| Examining board members: |
Jose Roberto Leite;
Marcos Henrique Degani;
Gilmar Eugenio Marques;
Euzi Conceicao Fernandes da Silva;
Amós Troper
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| Advisor: | Jose Roberto Leite |
| Abstract | |
p-type ro-doping quantum wells and superlattices are semiconductor systems of considerable interest for basic research and device applications. In this work, a method for calculating potentials and band structures of such systems is developed. The method relies on a plane wave expansion of the multiband effective mass equation, uses kinetic energy matrices of any size, and takes exchange correlation into account in a more rigorous way than this was done before. The method is used to calculate potential profiles, subband and miniband structures as well as Fermi level positions for a series of p-type delta-doping quantum wells and superlattices. The differences between n- and p-type delta-doping structures are studied. In addition to this we developed a procedure within this method to ca1culate photoluminescence (PL) spectra of the wells studied. It depends on the oscillator strength between the holes inside the wells and the free electrons on the conduction band. We use this procedure to calculate envelope functions, overlap integrals and direct and indirect transitions spectra. Finally, we compare our theoretical calculations of PL spectra with experimental results extracted from the literature. (AU) | |