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| Author(s): |
Elton Márcio da Silva Santos
Total Authors: 1
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| Document type: | Master's Dissertation |
| Press: | São Carlos. |
| Institution: | Universidade de São Paulo (USP). Instituto de Física de São Carlos (IFSC/BT) |
| Defense date: | 2006-06-28 |
| Examining board members: |
Guilherme Matos Sipahi;
Klaus Werner Capelle;
Luisa Maria Ribeiro Scolfaro
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| Advisor: | Guilherme Matos Sipahi |
| Abstract | |
In this work, we use the k.p method in the approximation of the envelope function, that is a very useful tool, to the solution of heterostructure related problems. We present a semiconductor heterostructure analysis with confinement on the three directions (Quantum Dots), using the Kane Hamiltonian (8x8) on its generalized form to describe electron eigenstates on the conduction and valence bands. Using this tool, we have made band structure simulations in quasi zero-dimensional systems of InAs in GaAs matrices, in diverse shapes and dimensions and on different tension states. A systematic study of how the geometrical properties and dimensions of a given system could influence the electronic states was also done. There can be confirmed the presence of localized states and the sensitivity of the electronic states to these properties.We could observe a deviation to the red on the photoluminescence spectrum with the increase of the system dimensions. There were also made calculations on InN dots in a GaN matrix, which allow to explore other electromagnetic spectral regions and we have studied their behavior under different tension states. From the system eigenvalues, we calculated the photoluminescence spectra from the heterostructures studied here, allowing a direct comparison with experimental results. It can be verified that the strain is is extremely important on the determination of the electronic states of the studied systems in the presence of an hydrostatic strain. We could observe important modifications on the optical responseof the material, where there is a deviation to the blue when it is considered the presence of the hydrostatic strain. (AU) | |