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Plasma-phonon dynamics and terahertz emission in GaAs and Te Surfaces excited via ultrafast pulses

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Author(s):
Fabricio Macedo de Souza
Total Authors: 1
Document type: Master's Dissertation
Press: São Carlos.
Institution: Universidade de São Paulo (USP). Instituto de Física de São Carlos (IFSC/BT)
Defense date:
Examining board members:
Jose Carlos Egues de Menezes; Lidério Citrângulo Ioriatti Júnior; Jose Roberto Leite
Advisor: Jose Carlos Egues de Menezes
Abstract

Above-band-gap optical excitation of semiconductors generates highly non-equilibrium photocarriers which interact with phonons thus exciting vibrational modes in the system. This interaction induces refractive-index changes via the electro-optic effect. Moreover it gives rise to electromagnetic radiation at characteristic frequencies (terahertz). Both effects have been measured by time-resolved ultra fast spectroscopy. Recent pump-probe experiments have found strong modulations of the internal electric field through electro-optic measurements. The emitted electromagnetic radiation has also been detected by a terahertz dipole antenna. Both electro-optic and terahertz emission measurements provide information about the coupled dynamics of photocarriers and phonons. In this work we simulate the dynamics of plasmon-phonon coupled modes in n-GaAs and Tellurium (bulk) following ultrafast laser excitation. The time evolution of the photocarrier densities and currents is described semi classically in terms of the moments of the Boltzmann equation. Phonon effects are accounted for by considering a phenomenological driven-harmonic-oscillator equation, which is coupled to the electron-hole plasma via Poisson\'s equation. These equations constitute a coupled set of differential equations. We use finite differencing to solve these equations. From the numerical results for the evolution of internal fields we can calculate both the characteristic frequencies of system and its terahertz radiation spectrum. Our results are consistent with recent experimental data (AU)