Alexis Cristiano Vilas Bôas

Passionate about science and engineering, Alexis, 30, holds a Ph.D. in Electrical Engineering with a focus on integrated circuits from FEI. Currently, as a researcher, he plays a vital role in the development and advancement of the Ionizing Radiation Effects Laboratory (LERI), addressing the real infrastructure needs of the facility. Moreover, he actively collaborates on various scientific initiation, Masters, and Doctoral projects in the field of semiconductor radiation effects.Recently, Alexis completed a joint Ph.D. program between FEI and the University of Seville, focusing on ionizing radiation effects in electronic devices, with an emphasis on comparing the most promising high electron mobility transistor (HEMT) technologies: Gallium Nitride (GaN) and Silicon Carbide (SiC). During his undergraduate studies, Alexis undertook two scientific initiation projects, one funded by FAPESP, investigating radiation effects on a half-wave rectifier circuit. In his graduation year, he was recognized as the top student in his class and awarded by CREA.Throughout his Masters and Ph.D. studies, Alexis was selected to present his findings at major conferences in the field: RADECS in 2019 (Montpellier, France) and 2022 (Venice, Italy); SERESSA in 2019 (Seville, Spain) and 2022 (CERN, Geneva, Switzerland); and in 2024 at the esteemed SBMICRO conference in João Pessoa, Brazil. At the Seville conference, he received the award for best presentation. Early in his Ph.D., he was also honored with the Paul Phelps Continuing Education Grant 2022 by IEEE. Additionally, during his doctoral studies, he had the privilege of interviewing Nobel laureate Arthur McDonald.Alexis aspires to contribute to humanitys expansion into space, driven by his research on ionizing radiation-tolerant devices. His passion for science and innovation fuels his quest to develop solutions that could shape the future. (Source: Lattes Curriculum)