CV Lattes
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Ministério da Ciência, Tecnologia e Inovação (Brasil). Centro Nacional de Pesquisa em Energia e Materiais (CNPEM) (Institutional affiliation from the last research proposal) Birthplace: Brazil
I have obtained my BSc in Physics, with qualification in Basic Research in Physics, as well as a MSc in Physics, both from the Physics Institute, University of São Paulo (Instituto de Física, Universidade de São Paulo - IFUSP). I concluded my PhD in Nanosciences and Advanced Materials at the Federal University of ABC (Universidade Federal do ABC - UFABC). My thesis was awarded by Capes in 2016 with a nationwide prize. From 2016 until 2018 I worked as Research Associate (Postdoc) at the University of York - United Kingdom. Currently I have a position as postdoc in the Brazillian Nanotechnology Laboratory, located inside the National Centre for Research in Energy and Materials, in Campinas, Brazil. I am interested in Density-Functional-Theory-based computational simulations and Machine Learning algorithms aimed to study technologically relevant nanostructures, 2D materias, and semicondutor materials used in technological applications. (Source: Lattes Curriculum)
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Topological Insulators (TI) are insulators with metallic edges when interfaced with vacuum or trivial insulator (TI'). The wavefunction acquires geometric phases distinct from TI' when run over a closed cycle in the Brillouin zone (BZ), defining topological invariants leading to such edges.The first known system of this kind, the Quantum Hall effect (QH) presents perfect metallic wires at…
Memristors and Memristive Devices were idealized nearly 40 years ago, but were properly characterized in an experiment only in 2008. Those devices are attractive candidates to provide a paradigm change in volatile and non-volatile memory devices fabrication. These memory devices would be faster, denser and more enduring than the devices available today, but their immediate fabrication is …
Memristors and Memristive Devices have been predicted nearly 40 years ago, but it was only in 2008 that such devices were characterized in laboratory. These devices are strong candidates to change the paradigm of memory devices, either volatile and non-volatile storage systems. This would be achieved by the possibility of manufacturing denser, faster and better-enduring devices than those…
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