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(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Origin of van Hove singularities in twisted bilayer graphene

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Ribeiro, H. B. [1] ; Sato, K. [2] ; Eliel, G. S. N. [3] ; de Souza, E. A. T. [1] ; Lu, Chun-Chieh [4] ; Chiu, Po-Wen [4] ; Saito, R. [5] ; Pimenta, M. A. [3]
Total Authors: 8
[1] Univ Prebiteriana Mackenzie, MackGraphe Graphene & Nanomat Res Ctr, BR-01302907 Sao Paulo - Brazil
[2] Sendai Natl Coll Technol, Sendai, Miyagi 9893128 - Japan
[3] Univ Fed Minas Gerais, Dept Fis, BR-30123970 Belo Horizonte, MG - Brazil
[4] Natl Tsing Hua Univ, Dept Elect Engn, Hsinchu 30013 - Taiwan
[5] Tohoku Univ, Dept Phys, Sendai, Miyagi 9808578 - Japan
Total Affiliations: 5
Document type: Journal article
Source: Carbon; v. 90, p. 138-145, AUG 2015.
Web of Science Citations: 13

In this work, we present a resonance Raman spectroscopy study of more than 100 samples of twisted bilayer graphene (TBG) with a continuous distribution of twisting angles from 00 to 30, using three different laser excitation energies (1.96, 2.33 and 2.54 eV). From the Raman images of all investigated samples we could observe giant enhancements of the G band for samples with twisting angles between 90 and 17, in agreement with previous Raman studies of TBGs. However, although we investigated a large number of samples with low (<9 degrees) or high (>17 degrees) twisting angles, we could not observe the G-band enhancement that was predicted for these samples from the zone-folding of the single layer graphene electronic structure. Our results allow us to conclude that the van Hove singularities in the density of states are associated with the Moire pattern, which does not necessarily exhibit a translational symmetry. Moreover, we could observe that the Raman intensity ratio I-TBG/I-SLG in non-resonance cases is always smaller than two, and this value depends on the laser energy. This result is discussed in terms of the relaxation of photo-excited carriers in TBG, which is expected to increase with increasing laser excitation energy. (C) 2015 Elsevier Ltd. All rights reserved. (AU)

FAPESP's process: 12/50259-8 - Graphene: photonics and opto-electronics: UPM-NUS collaboration
Grantee:Antônio Hélio de Castro Neto
Support type: Research Projects - SPEC Program